HuagongsheHuagongshe Chemistry Print Report · For research reference only
Triethoxysilane → Vinyltriethoxysilane
Participants
| Role | Name | HCID | Charge |
|---|---|---|---|
| Reactant | Triethoxysilane | HCID 13830 | — |
| Reactant | Silane | HCID 23953 | — |
| Reactant | Bis(triethoxysilyl)ethane | HCID 85266 | — |
| Product | Vinyltriethoxysilane | HCID 6516 | 25% |
| Product | Tetraethoxysilane | HCID 6517 | — |
Reaction Steps
The reaction was carried out in accordance with the procedure of Comparative Example 2, except that the silane used was triethoxysilane and the reaction temperature was 150° C. The reaction was monitored by GPC and was completed in one hour. The major product formed was 1,2-bis(triethoxysilyl)ethane (72%), with vinyltriethoxysilane (25%) and tetraethoxysilane also being formed (3%). With a primary alkyl silane and at lower reaction temperatures, the undesired bis(silyl)ethane was the main reaction product.
Provenance & Evidence
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|---|
| Patent number | US04579965 |
| Source dataset | uspto-grants-1986_04 |
| ORD ID | ord-b6b83ade960f4b93a0072cd9f6b2af6c |
| Source note | uspto-grants-1986_04 |