Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
HRID 394599생성일: 2026년 10월 24일
Phenol → (7-Methoxynaphthalen-2-yl)sulfonic acid {1-[1-amino-7-isoquinolinylmethyl]-2-oxopyrrolidin-3-(S)-yl}amide hydrochloride
https://huagongshe.com/ko/reaction/394599
참여 물질
| 역할 | 이름 | HCID | 투입량 |
|---|
| 반응물 | Phenol | HCID 996 | — |
| 반응물 | Ammonium Acetate | HCID 517165 | — |
| 반응물 | 7-Methoxy-naphthalene-2-sulfonic acid[1-(1-chloro-isoquinolin-7-ylmethyl)-2-oxopyrrolidin-3-(s)-yl]-amide | HCID 15545831 | — |
| 용매 | Diethyl Ether | HCID 3283 | — |
| 생성물 | (7-Methoxynaphthalen-2-yl)sulfonic acid {1-[1-amino-7-isoquinolinylmethyl]-2-oxopyrrolidin-3-(S)-yl}amide hydrochloride | HCID 70124326 | 53.5% |
반응 단계
In a round-bottomed flask fitted with a cold finger condenser, phenol (0.569 g, 6 mmol) and 7-methoxy-naphthalene-2-sulfonic acid [1-(1-chloro-isoquinolin-7-ylmethyl)-2-oxopyrrolidin-3-(S)-yl]-amide (0.2 g, 0.4 mmol) is melted at 70° C. The mixture is stirred for 5 minutes, then ammonium acetate (0.462 g, 6 mmol) is added and heated at 115° C. for 2 hours. After this time, additional ammonium acetate (0.462 g, 6 mmol) is added. After 2 hours the reaction mixture is cooled to room temperature then partitioned between EtOAc and 0.5N NaOH, The organic layer is separated and washed with water and brine, then dried over Na2SO4, filtered and concentrated. The resulting residue is partially purified by RP-HPLC eluting with a gradient of 10% CH3CN/H2O (0.1% TFA) to 100% CH3CN. The appropriate fractions are concentrated in vacuo. The solid which precipitates out from the solution is then filtered, dried and purified again by column chromatography eluting with 5% MeOH/CH2Cl2. This product is then triturated with cold MeOH and the collected solid is suspended in MeOH and cooled to 0° C. HCl(g) is bubbled through the slurry for a few minutes during which time all the solid dissolves into the solution. The solvent is removed in vacuo and the title product (0.11 g, 0.214 mmol) is washed with ether and dried.
출처 및 근거
| DOI | 10.6084/m9.figshare.5104873.v1 |
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| 특허 번호 | US06602864B1 |
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| 출처 데이터셋 | uspto-grants-2003_08 |
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| ORD ID | ord-d6e8712fe9b14041ba023cb7ca6bd364 |
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| 출처 메모 | uspto-grants-2003_08 |
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