HCID 178418361, compound → Cobalt

HRID 1075358Notes

Reaction equation

HRID 1075358 reaction equation
[CH3:1][Co:2]([CH3:8])[C:3]1[CH2:7][CH:6]=[CH:5][CH:4]=1.[H][H]>>[Co:2].[CH3:1][Co:2]([CH3:8])[C:3]1[CH2:7][CH:6]=[CH:5][CH:4]=1

Participants

4

Reactant 2

HCID 178418361HCID 178418361, compoundHCID 178477768HCID 178477768, compound3×

Product 2

HCID 104730CobaltHCID 178477768HCID 178477768, compound

Procedure

Subsequently, the gas source 14d vaporizes bis-methyl-cyclopenta-dienyl-cobalt expressed by the chemical formula "Co(CH3C5H4)2 ", and the bis-methyl-cyclopenta-dienyl-cobalt gas is carried on hydrogen gas. The gaseous mixture is supplied to the chamber 14a. The hydrogen carrier gas is regulated 100 to 400 sccm, and the bis-methyl-cyclopenta-dienyl-cobalt gas is regulated to 10 to 40 sccm. The gaseous mixture is maintained at 13 to 52 Pa in the chamber, and the p-type silicon substrate 11 is heated to 200 to 400 degrees centigrade. Cobalt is produced from the bis-methyl-cyclopenta-dienyl-cobalt gas through the pyrolysis, and is deposited to 10 to 20 nanometers thick on the entire surface of the structure.

Workup

  1. temperatureThe gaseous mixture is maintained at 13 to 52 Pa in the chamber
  2. temperaturethe p-type silicon substrate 11 is heated to 200 to 400 degrees centigrade

Sources & evidence

ORD record
ord-740d78b30741413ba5a5e2c52221b12a
Source dataset
uspto-grants-1999_05
Patent number
US05899720

Reaction notes

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