Ammonia → Silicon tetrachloride

HRID 1443637Notes

Reaction equation

HRID 1443637 reaction equation
[Si:1]([Cl:5])([Cl:4])([Cl:3])[Cl:2].N.[N:7]#[N+:8][O-].[O:10]=[O+:11][O-:12]>>[Si:1]([Cl:5])([Cl:4])([Cl:3])[Cl:2].[NH3:7].[O:10]=[O+:11][O-:12].[N:7]#[N:8]

Participants

6

Reactant 4

HCID 222AmmoniaHCID 24816Silicon tetrachlorideHCID 24823OzoneHCID 178514647HCID 178514647, compound

Product 2

HCID 24816Silicon tetrachlorideHCID 131727882Azane;molecular nitrogen;ozone

Procedure

An SiON passivation layer, e.g., 104 in FIGS. 1A and 1B, can be deposited in MOCVD mode using reactants SiCl4, NH3, N2O, or ozone appropriately diluted in a nitrogen carrier at approximately 650 C˜750 C. Such a layer could also be formed in ALD mode with cycles of SiCl4 at approximately 400 C˜450 C and NH3-N20-N2 or NH3-O3-N2 at approximately 650 C˜700 C while maintaining appropriate gas pressures of SiCl4, NH3, and N2O to achieve desired film composition at a slow deposition rate less than 0.1 nm/sec.

Workup

  1. additionappropriately diluted in a nitrogen carrier at approximately 650 C˜750 C

Sources & evidence

ORD record
ord-2a4f328ffa0e4583a49f63c55c521c2c
Source dataset
uspto-grants-2010_02
Patent number
US07662693B2

Reaction notes

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