反应详情

温度

650 °C

A 0.4M solution of Cu(OAc)2 (0.5 g) in pyridine/HOAc (~4:1) was prepared at a temperature of approximately 120° C., generating a homogenous precursor solution. Thin films were deposited and heat treated on a 300° C. hot plate and then heated to 650° C. to form the copper oxide thin film.

1. temperatureheat
2. additiontreated on a 300° C. hot plate