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HCID 3468413Erstellt: 3. November 2026

Indiumantimonid

INDIUM ANTIMONIDE · InSb · indium stibide · Antimony-indium · indiganylidynestibane · Indium antimonide lump · Indium(III) antimonide · Stibinetriylindium(III)

https://huagongshe.com/de/chemical/3468413

Molekülstruktur von Indiumantimonid

Identifikatoren & physikalische Daten

CAS No.1312-41-0
SummenformelInSb
Durchschnittliche Molmasse236,58 g/mol
SMILES[In]#[Sb]
InChIKeyWPYVAWXEWQSOGY-UHFFFAOYSA-N
PubChem CID3468413
EC No.215-192-3
Lokaler NameIndiumantimonid

Chemische & physikalische Eigenschaften

Schmelzpunkt535°C
Dichte5,76 g/cm3
LagerbedingungenStore at room temperature, keep dry and cool
Aggregatzustandcrystal
Wichte5.76
Farbeblack
LöslichkeitInsoluble in water.
Spezifische WärmekapazitätCp(crystal): 0.21 J/(g·K), at 25℃
Merck14,4948
InChI1S/In.Sb
InChIKeyWPYVAWXEWQSOGY-UHFFFAOYSA-N
SMILES[In]#[Sb]
Knoop Microhardness2200, N/mm2
CAS Datenbank1312-41-0(CAS DataBase Reference)
EPA chemische InformationenAntimony, compd. with indium (1:1) (1312-41-0)

Sicherheit & Vorschriften

Wassergefährdungsklasse (WGK)2
TSCA-Inventar-StatusTSCA listed
UN-TransportnummerUN 1549 6.1/PG 3
Zollcode2853909090
RTECS-Nr.NL1105000
R-Sätze (R)20/22-51/53
GefahrensymboleXn,N
Sicherheitshinweise (S)61
Gefahrenklasse6.1Acute Tox. 4 InhalationAcute Tox. 4 OralAquatic Chronic 2
VerpackungsgruppeIII
Lagerklasse6.1D - Non-combustible acute toxic Cat.3toxic hazardous materials or hazardous materials causing chronic effects

Anwendungen & Verwendung

Verwenden

In semiconductor electronics. Grown p-n junctions(Indium(III) antimonide) have been made by doping a melt with an acceptor impurity such as zinc or cadmium, and dipping in an n-type crystal. Rate-grown junctions have also been made. Broad-area surface junctions have been produced by out-diffusing antimony in vacuum from the surface of an n-type crystal, producing a p-n junction just inside the surface. Also has photoconductive, photoelectromagnetic, and magnetoresistive properties. Useful as an infrared detector and filter, and in Hall effect devices.

Herstellung & Synthese

synthetische

Indium antimonide may be synthesized from its elements by fusion of sto-ichiometric amounts of indium and antimony at elevated temperatures in anevacuated, sealed ampule.