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Octafluorocyclobutane
C318 · R318 · FC318 · RC318 · r-c318 · R C318 · FKWC318 · CFC-318
Identifikatoren & physikalische Daten
| CAS No. | 115-25-3 |
|---|---|
| Summenformel | C4F8 |
| Durchschnittliche Molmasse | 200,03 g/mol |
| Monoisotopische Masse | 199,98722576 g/mol |
| SMILES | FC1(F)C(F)(F)C(F)(F)C1(F)F |
| InChIKey | BCCOBQSFUDVTJQ-UHFFFAOYSA-N |
| PubChem CID | 8263 |
| ChEMBL | CHEMBL444147 |
| ChEBI | CHEBI:31007 |
| EC No. | 204-075-2 |
| DTXSID | DTXSID9041811 |
Chemische & physikalische Eigenschaften
| XLogP | 1,6 |
|---|---|
| Polarare Oberfläche (TPSA) | 0 |
| H-Brücken-Donoren | 0 |
| H-Brücken-Akzeptoren | 8 |
| Frei drehbare Bindungen | 0 |
| Schwere Atome | 12 |
| Formalladung | 0 |
| Komplexität | 151 |
| Stoffklassen | Other Classes -> Halogenated Cyclic Hydrocarbons |
| PFAS | PFAS -> PFAS identified in REACH Regulation EC No. 1272/2008PFAS -> Other/unspecifiedPFAS -> Intentionally added food contact chemicalsPFAS -> OECD CategoryPFAS -> non-polymer |
| SpringerMaterials Properties | Schoenflies notation |
| Lebensmittelzusatzstoffe | PROPELLANT -> FDA Substance added to food |
| Dichte | 1.513 @ -21°C1,48 g/cm3 |
| Löslichkeit | 0.0236 mg/mL at 25 °C |
| Siedepunkt | -6.04 °C @760 [mm Hg]-6 °C |
| Schmelzpunkt | -41.4 °C |
| Physical Description | Octafluorocyclobutane is a colorless nonflammable gas. It may be harmful by asphyxiation. Exposure of the container to prolonged heat or fire can cause it to rupture violently and rocket. It is used to make other chemicals.Gas VaporLiquidNon-flammable and non-toxic gas[Merck Index] Colorless odorless liquefied gas[Air Liquide America MSDS] |
| Brechungsindex | 1.217 |
| Henry-Konstante | 1.2×10-6 mol/(m3Pa) at 25℃, Clever et al. (2005) |
| InChI | InChI=1S/C4F8/c5-1(6)2(7,8)4(11,12)3(1,9)10 |
| InChIKey | BCCOBQSFUDVTJQ-UHFFFAOYSA-N |
| SMILES | C1(F)(F)C(F)(F)C(F)(F)C1(F)F |
| LogP (Verteilungskoeffizient) | 1.97 |
| CAS Datenbank | 115-25-3(CAS DataBase Reference) |
| NIST chemische Informationen | Octafluorocyclobutane(115-25-3) |
| EPA chemische Informationen | Perfluorocyclobutane (115-25-3) |
Sicherheit & Vorschriften
| GHS-Einstufung | WarningH280 (69.3%): Contains gas under pressuremay explode if heated [Warning Gases under pressure]P273, P391, P410+P403, and P501 (click each P-code to see the statement)Aggregated GHS information provided per 153 reports by companies from 6 notifications to the ECHA C&L Inventory. Each notification may be associated with multiple companies.H280: Contains gas under pressure |
|---|---|
| Regulatorische Informationen | Chemical: Cyclobutane, octafluoro-Cyclobutane, 1,1,2,2,3,3,4,4-octafluoro- is listed on the EPA's Chemical Data Reporting (CDR) system. Manufacturers and importers of Cyclobutane, 1,1,2,2,3,3,4,4-octafluoro- are required to report information about their production and use of this chemical to the EPA under the Toxic Substances Control Act (TSCA). (40 eCFR Part 711)REACH registered substance: Octafluorocyclobutane (EC: 204-075-2)The New Jersey Worker and Community Right to Know Act requires public and private employers to provide information about hazardous substances at their workplaces. (N.J.S.A. 34:5A-1 et. seq.) |
| DOT-Kennzeichnung | Non-Flammable Gas |
| Brandgefahren | Excerpt from ERG Guide 126 [Gases - Compressed or Liquefied (Including Refrigerant Gases)]:· Some may burn but none ignite readily. |
| Gesundheitsgefahren | Excerpt from ERG Guide 126 [Gases - Compressed or Liquefied (Including Refrigerant Gases)]:· Vapors may cause dizziness or asphyxiation without warning, especially when in closed or confined areas. |
| Gefahrenübersicht | Causes changes in recordings from specific areas of the CNS in 17-week intermittent inhalation studies of mice[RTECS] May cause asphyxiation[CAMEO] A simple asphyxiantEvaporating liquid can cause frostbite[Air Liquide America MSDS] |
| DOT-Nummer und Handbuch | 1976 126 |
| Reaktive Gruppe | Fluorinated Organic Compounds |
| Reactivity Profile |
Anwendungen & Verwendung
Verwenden
Refrigerant; heat-transfer medium.Halocarbon 318 is used for plasma etching. When it is exposed to the RF field generated in the etching process, a gas plasma is produced that will etch silicon compounds with excellent selectivity.