Zurück
HuagongsheHuagongshe Chemie-Druckbericht · Nur für Forschungszwecke
HRID 1378887Erstellt: 26. Oktober 2026

Boron Nitride → Boron boron carbide

https://huagongshe.com/reaction/1378887

Reaktionsgleichung

Beteiligte Stoffe

RolleNameHCIDEinwaage
EduktBoron NitrideHCID 66227—
EduktBoron carbideHCID 123279—
EduktBoronHCID 5462311—
ProduktBoron boron carbideHCID 131720199—
ProduktBoron nitride boron carbideHCID 131720200—
ProduktBoron boron nitride boron carbideHCID 131720201—

Reaktionsschritte

It has thus been shown that this invention involves the fabrication of multilayer structures from thin films or coatings of boron, boron nitride, and boron carbide to form multilayer films or coatings of boron/boron carbide, boron nitride/boron carbide, and boron/boron nitride/boron carbide and involves processes which utilizes dc and rf magnetron sputtering, and simply changing the type of sputtering gas. The boron/boron carbide multilayers, are produced in an inert atmosphere, such as argon, helium, neon, krypton, and xenon, with argon being preferred; and the cubic boron nitride/boron carbide multilayers are produced in an alternating reactive and inert atmosphere with reactive gases such as nitrogen, ammonia, ammonia-nitrogen-argon, with nitrogen preferred, or a mixture of nitrogen with argon. The cubic boron nitride/boron carbide multilayers require alternate rf (c-BN) and dc (B4C) magnetron sputtering. The atmosphere may be varied during the processing to produce diffused (blended or graded) layers.

Herkunft & Nachweise

DOI10.6084/m9.figshare.5104873.v1
PatentnummerUS05670252
Quelldatensatzuspto-grants-1997_09
ORD IDord-43c7600af66a445f94efe180531a0f2b
Quellennotizuspto-grants-1997_09