Hydrochloric Acid → HCID 57189850, Verbindung
Reaktionsgleichung
[CH:1]([Si:5]([CH:9]([CH2:11][CH3:12])[CH3:10])([CH3:8])OC)([CH2:3][CH3:4])[CH3:2].[ClH:13]>>[CH:1]([Si:5]([CH:9]([CH2:11][CH3:12])[CH3:10])([CH3:8])[Cl:13])([CH2:3][CH3:4])[CH3:2]Komponenten
3
Versuchsvorschrift
The resulting organic layer containing di-sec-butyl methylmethoxysilane was treated with 35% hydrochloric acid in the same manner as in Example 15(d). The organic layer was separated from the aqueous layer and was subjected to a fractional distillation under a reduced pressure to afford 32 g of di-sec-butylmethylchlorosilane as a fraction boiling at 78° C.-81° C./16 mm Hg (yield; 81%).
Aufarbeitung
- customThe organic layer was separated from the aqueous layer
- distillationwas subjected to a fractional distillation under a reduced pressure
Quellen und Nachweise
- ORD-Eintrag
- ord-4d6259277371463180e193fb12e9a9d3
- Quelldatensatz
- uspto-grants-2011_08
- Patentnummer
- US08008521B2
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