Beteiligte Stoffe
| Rolle | Name | HCID | Einwaage |
|---|
| Edukt | Mesitylene | HCID 7947 | — |
| Edukt | Anthracenecarboxaldehyde | HCID 35864 | — |
| Edukt | 1-Vinylanthracene | HCID 13907058 | — |
| Produkt | Anthracene | HCID 8418 | — |
Reaktionsschritte
Approximately 10 mmol mesitylene solution of vinylanthracene (VA) or anthraldehyde (AnA) was put in a round bottom flask and bubbled with nitrogen or argon gas for at least 30 min. A piece of the H-terminated silicon substrate was then immersed in the solution and allowed to react with VA or AnA for about 12 h under reflux at about 150° C. in an oil bath. During the reaction, the solution was also purged with nitrogen (or argon) to eliminate dissolved oxygen and to prevent the substrate from being oxidized. After the reaction, the substrate derivatized with VA or AnA was rinsed with dichloromethane, acetonitrile and methanol, and dried under a stream of nitrogen gas. The derivatization of the H-terminated surface with anthracene moieties as described in Example 3 is illustrated in FIG. 6.
Herkunft & Nachweise
| DOI | 10.6084/m9.figshare.5104873.v1 |
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| Patentnummer | US08197650B2 |
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| Quelldatensatz | uspto-grants-2012_06 |
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| ORD ID | ord-f58781bb35a2402ab83b7ad0e71ac9f1 |
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| Quellennotiz | uspto-grants-2012_06 |
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