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Tetrahydrofuran → 3-Chloropropylmethyldivinylsilane

HRID 217565
Notizen
Druckvorschau

Reaktionsgleichung

Reaktionsgleichung von HRID 217565
[Cl:1][CH2:2][CH2:3][CH2:4][SiH2:5][CH:6](Cl)Cl.[CH:9]([Mg]Cl)=[CH2:10].[CH2:13]1COC[CH2:14]1>>[Cl:1][CH2:2][CH2:3][CH2:4][Si:5]([CH3:6])([CH:9]=[CH2:10])[CH:13]=[CH2:14]
KomponentenVersuchsvorschriftAufarbeitungQuellen und NachweiseNotizen zur Reaktion

Komponenten

4

Edukt 3

HCID 8028TetrahydrofuranHCID 707000943-Chloropropyl dichloromethylsilaneHCID 178461836HCID 178461836, Verbindung

Produkt 1

HCID 541650973-ChloropropylmethyldivinylsilaneAusbeute 91 %

Versuchsvorschrift

The above-synthesized 3-chloropropyldichloromethylsilane (3) (9 g, 52.2 mmol) was dissolved in 50 mL of THF, to which 1.6 M vinylmagnesium chloride (98 mL, 157 mmol) was then slowly added at 0°, and the mixture was stirred for 2 hours. After the reaction, the organic layer was extracted with NH4Cl aqueous solution and ether, and washed with saturated NaCl. The washed organic layer was dried with anhydrous MgSO4 and then filtered through celite to remove MgSO4. After evaporating the solvent, and the resulting residue was purified by column chromatography (n-Hexane, Rf=0.36) to give 8.3 g (91% yield) of pure 3-chloropropylmethyldivinylsilane (4).

Aufarbeitung

  1. additionwas then slowly added at 0°
  2. customAfter the reaction
  3. extractionthe organic layer was extracted with NH4Cl aqueous solution and ether
  4. washwashed with saturated NaCl
  5. dry with materialThe washed organic layer was dried with anhydrous MgSO4
  6. filtrationfiltered through celite
  7. customto remove MgSO4
  8. customAfter evaporating the solvent
  9. customthe resulting residue was purified by column chromatography (n-Hexane, Rf=0.36)

Quellen und Nachweise

ORD-Eintrag
ord-f0c72c307fcf4b5894ed67383c03633c
Quelldatensatz
uspto-grants-2012_06
DOI
10.6084/m9.figshare.5104873.v1
Patentnummer
US08197903B2

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