HuagongsheHuagongshe Chemie-Druckbericht · Nur für Forschungszwecke
Dichlorodimethylsilane → di(1H-inden-1-yl)dimethylsilane
Beteiligte Stoffe
| Rolle | Name | HCID | Einwaage |
|---|---|---|---|
| Edukt | Dichlorodimethylsilane | HCID 6398 | — |
| Edukt | Indene | HCID 7219 | — |
| Edukt | Butyllithium | HCID 178418339 | — |
| Edukt | HCID 178506815 | HCID 178506815 | — |
| Produkt | di(1H-inden-1-yl)dimethylsilane | HCID 599429 | 71% |
Reaktionsschritte
In detail, in Japanese Patent Laid-Open Publication No. 221285/1990 for example, a solution of an indenyl lithium salt prepared from indene and n-butyllithium is slowly added to a dimethyldichlorosilane solution, and they are reacted with each other overnight to obtain dimethyldi(1-indenyl)silane in a 71% yield. In Japanese Patent Laid-Open Publication No. 268307/1992, dimethyldi (2-methyl-1-indenyl) silane is obtained in a 16% yield in a manner similar to the above.
Herkunft & Nachweise
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|---|
| Patentnummer | US05360921 |
| Quelldatensatz | uspto-grants-1994_11 |
| ORD ID | ord-ce9b78dae72b4ddc992262c705339d43 |
| Quellennotiz | uspto-grants-1994_11 |