HuagongsheHuagongshe Chemie-Druckbericht · Nur für Forschungszwecke
HRID 241501Erstellt: 25. Oktober 2026
Dichlorodiphenylsilane → (3-Bromophenyl)diphenyl(triphenylen-2-yl)silane
https://huagongshe.com/reaction/241501
Beteiligte Stoffe
| Rolle | Name | HCID | Einwaage |
|---|
| Edukt | Dichlorodiphenylsilane | HCID 6627 | — |
| Edukt | 1,3-Dibromobenzene | HCID 7927 | — |
| Edukt | Hexane | HCID 8058 | — |
| Edukt | Dichloro(phenyl)silane | HCID 74207 | — |
| Edukt | Butyllithium | HCID 178418339 | — |
| Edukt | HCID 178506667 | HCID 178506667 | — |
| Lösungsmittel | Diethyl Ether | HCID 3283 | — |
| Produkt | (3-Bromophenyl)diphenyl(triphenylen-2-yl)silane | HCID 86684651 | 75% |
| Produkt | HCID 178506674 | HCID 178506674 | — |
Reaktionsschritte
Into a suspension of 2-bromotriphenylene (7.28 g, 23.70 mmol) in ether (50 mL) was added n-butyllithium solution in hexane (14.81 mL, 23.70 mmol) dropwise at −78° C. The suspension was gradually warmed to 0° C. and stirred for 3 hours to yield a solution of triphenylenyllithium. In a separate flask a solution of 3-bromophenyllithium was prepared by dropwise addition of n-butyllithium solution in hexane (14.81 mL, 23.70 mmol) into a solution of 1,3-dibromobenzene (2.87 mL, 23.70 mmol) in ether (50 mL). The solution was stirred at this temperature for 2.5 hours before being transferred into a solution of dichlorodiphenylsilane (4.88 mL, 23.70 mmol) in ether (30 mL) at −78° C. After stirring for another 2 h, the triphenylenyllithium solution prepared above was introduced dropwise into the flask containing the dichlorophenylsilane. The reaction mixture was allowed to gradually warm to room temperature and was stirred overnight. The mixture was quenched with water and the organic phase was isolated. Upon evaporation of the solvent, the residue was purified by column chromatography on silica gel with hexane/DCM (85/15, v/v) as eluent to yield (3-bromophenyl)diphenyl(triphenylen-2-yl)silane (8.5 g, 75%) as a white powder.
Herkunft & Nachweise
| DOI | 10.6084/m9.figshare.5104873.v1 |
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| Patentnummer | US08652656B2 |
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| Quelldatensatz | uspto-grants-2014_02 |
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| ORD ID | ord-eb95efb52ae145e2abfbd0c227366ae9 |
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| Quellennotiz | uspto-grants-2014_02 |
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