(4-Bromobutyl)(ethoxy)dimethylsilane → (4-Bromobutyl)(ethenyl)dimethylsilane

HRID 730250Notizen

Reaktionsgleichung

Reaktionsgleichung von HRID 730250
[CH:1]([Mg]Br)=[CH2:2].[Br:5][CH2:6][CH2:7][CH2:8][CH2:9][Si:10]([CH3:15])([CH3:14])OCC>O1CCCC1>[Br:5][CH2:6][CH2:7][CH2:8][CH2:9][Si:10]([CH3:15])([CH3:14])[CH:1]=[CH2:2]

Komponenten

4

Edukt 2

HCID 22928485(4-Bromobutyl)(ethoxy)dimethylsilaneHCID 178418507HCID 178418507, Verbindung

Produkt 1

HCID 22928484(4-Bromobutyl)(ethenyl)dimethylsilaneAusbeute 79,8 %

Reagenzien, Katalysatoren, Lösungsmittel 1

HCID 8028TetrahydrofuranLösungsmittel

Reaktionsbedingungen

Temperatur
70 °C

Versuchsvorschrift

A 3 l reactor was charged under nitrogen with 11 of vinyl magnesium bromide in THF (tetrahydrofuran) and 184 g of 4-bromobutyl-dimethyl-ethoxysilane were added slowly at room temperature. The mixture was then refluxed at 70° C. for 16 h. After cooling on ice, the mixture was quenched with 407 g of a 20% HBr (w/w) solution, after which it was stirred for another 1.5 h. The THF layers were separated from the aqueous layers and neutralized with aq. sodium hydrogen carbonate solution. The THF was evaporated and the residue was distilled in the presence of 1 g Pt/C to obtain 135.8 g (79.8%) of pure 4-bromobutyl-dimethyl-vinylsilane

Aufarbeitung

  1. additionwere added slowly at room temperature
  2. temperatureAfter cooling on ice
  3. customthe mixture was quenched with 407 g of a 20% HBr (w/w) solution
  4. customThe THF layers were separated from the aqueous layers
  5. customThe THF was evaporated
  6. distillationthe residue was distilled in the presence of 1 g Pt/C

Quellen und Nachweise

ORD-Eintrag
ord-e7def45522da438c8c81ccfa00ba67b2
Quelldatensatz
uspto-grants-2009_09
Patentnummer
US07582703B2

Notizen zur Reaktion

Wird geladen…