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HRID 962820Erstellt: 25. Oktober 2026

1-Bromo-2-methylpropane → (3-Buten-1-yl) [2-(2-methyl-1-propyl)-1,3-dithian-2-yl]diphenylsilane

https://huagongshe.com/reaction/962820

Reaktionsgleichung

Beteiligte Stoffe

RolleNameHCIDEinwaage
Edukt1-Bromo-2-methylpropaneHCID 6555—
Edukt(3-Buten-1-yl)(1,3-dithian-2-yl)diphenylsilaneHCID 15349849—
EduktButyllithiumHCID 178418339—
LösungsmittelTetrahydrofuranHCID 8028—
Produkt(3-Buten-1-yl) [2-(2-methyl-1-propyl)-1,3-dithian-2-yl]diphenylsilaneHCID 2228705892,5%

Reaktionsschritte

To a solution of 32 (4.68 g, 13.1 mmol) in THF (100 mL) at -78° C. was added dropwise over 10 min n-butyllithium (1.6M in hexanes, 18.4 mmol). After 3 h of stirring under argon, 1-bromo-2-methylpropane (2.14 mL, 19.7 mmol) was added dropwise over 5 min, and the mixture was stirred for 2 h at -78° C. and overnight at rt. The reaction mixture was quenched with water (10 mL) and the excess organic solvent was removed under reduced pressure. The crude mixture was extracted with three 100-mL portions of EtOAc. The combined organic extracts were washed with saturated aqueous NaCl, dried over Na2SO4, and concentrated. Flash chromatography over silica gel (1/9 EtOAc:hexane) gave pure 26 as a colorless solid (5.0 g, 92%): R.function. =0.75 (1/9 EtOAc:hexane); mp 67°-69° C. 1H NMR (300 MHz, CDCl3) δ7.83 (d, J=6.0 Hz, 4H), 7.41 (m, 6H), 5.88 (m, 1H), 4.97 (dd, J=17.1, 1.7 Hz, 1H), 4.88 (dd, J=10.1, 1.7 Hz, 1H), 3.04 (m, 2H), 2.49 (t, J=4.3 Hz 1H), 2.44 (t, J=4.1 Hz, 1H), 2.08 (d, J=5.1 Hz, 2H), 1.98 (m, 4H), 1.79 (m, 1H), 1.54 (m, 2H), 0.82 (d, J=6.7 Hz, 6H); 13C NMR (75 MHz, CDCl3) δ141.5, 136.7, 132.9, 129.9, 127.7, 113.0, 45.7, 39.9, 28.3, 27.2, 24.6, 24.3, 24.2, 11.0; IR (film) 3068 (m), 3043 (m), 2951 (s), 2912 (s), 2863 (m), 1432 (s), 1274 (w), 1113 (s), 997 (m), 913 (m), 738 (s), 705 (s) cm-1 ; MS (EI) m/e (rel. intensity) 289 (M+ -123, 3), 237 (8), 183 (72), 175 (100), 159 (32), 143 (17), 119 (16), 105 (35); HRMS (FAB) calcd for C24H32S2Si: 412.1715 (MH+ -1), found: 412.1727. Anal. Calcd for C24H32S2 Si: C, 69.84; H, 7.82. Found: C, 70.08; H, 8.07.

Herkunft & Nachweise

DOI10.6084/m9.figshare.5104873.v1
PatentnummerUS05760019
Quelldatensatzuspto-grants-1998_06
ORD IDord-0a2b1231cdea49dd923dd42c34fc12a8
Quellennotizuspto-grants-1998_06