HuagongsheHuagongshe Chemie-Druckbericht · Nur für Forschungszwecke
Silica → Ammonia
Beteiligte Stoffe
| Rolle | Name | HCID | Einwaage |
|---|---|---|---|
| Edukt | Silica | HCID 24261 | — |
| Edukt | Trisilicon tetranitride | HCID 3084099 | — |
| Produkt | Ammonia | HCID 222 | — |
| Produkt | Silane | HCID 23953 | — |
| Produkt | Trisilicon tetranitride | HCID 3084099 | — |
Reaktionsschritte
Next, a middle silicon nitride layer 12 is deposited onto the first layer 10 of silicon dioxide previously deposited. Silicon nitride is produced from the reaction of silane (SiH4) with nitrogen and ammonia (NH3). The nitride deposition is performed, for example, in a "pancake style"]reactor. Typically, 3.5 minutes is required to deposit 500 Angstroms of Si3N4 at 800° C.
Herkunft & Nachweise
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|---|
| Patentnummer | US04052251 |
| Quelldatensatz | uspto-grants-1977_10 |
| ORD ID | ord-6f007f246b7a4bd4a4b23dffc3c83d94 |
| Quellennotiz | uspto-grants-1977_10 |