Silicon tetraiodide
Basic information
- CAS
13465-84-4- Standard SMILES
I[Si](I)(I)I- InChIKey
CFTHARXEQHJSEH-UHFFFAOYSA-N- Molecular formula
- I4Si
- Average molar mass
- 535.703 g/mol
- Monoisotopic mass
- 535.5948
Names & identifiers
- Preferred name
- Silicon tetraiodide
- IUPAC
- tetraiodosilane
- English name
- SILICON (IV) IODIDE
- Molecular formula
- I4Si
- Molecular weight
- 535.7
Names & synonyms
TetraiodosilaneSilicon tetraiodideSilane, tetraiodo-SILICON (IV) IODIDEEINECS 236-706-2DTXSID5065489Silane, tetraiodoRefChem:885590DTXCID8034247236-706-213465-84-4Silicon(IV) iodide
Show more names
etraiodosilanetetraiodo-silanTetraiodosiliconSiI4 (99.999% - Si)
Silicon iodideMFCD00054041SiI4Si I4SCHEMBL41722CFTHARXEQHJSEH-UHFFFAOYSA-NSilicon(IV) iodide (99.9%-Si)Q217994
Database identifiers
- CAS
13465-84-4- PubChem CID
- 83498
- DTXSID
DTXSID5065489- EC Number
- 236-706-2
- Nikkaji
- J134.349A
Properties
Computed structural properties
- Topological polar surface area
- 0 Ų
- Hydrogen bond donors
- 0
- Hydrogen bond acceptors
- 0
- Rotatable bonds
- 0
- Heavy atoms
- 5
- Formal charge
- 0
- Complexity
- 19.1
Experimental & physicochemical properties
Chemical ClassesMetals -> Metalloid Compounds (Silicon)
SpringerMaterials Properties29Si nuclear magnetic resonance spectrum
Physical DescriptionWhite solid; [Hawley] White or pink crystalline solid; [MSDSonline]
Physicochemical properties
- Melting point
- 120 °C · 120 °C
- Boiling point
- 287.4 °C · 287.4 °C
- Density
- 4.198 · 4.198
- Flash point
- 287.5 °C · 287.5°C
- form
- Lumps
- Specific Gravity
- 4.198 · 4.198
- color
- White
- Water Solubility
- Soluble in organic solvents. Insoluble in water.
- Sensitive
- Moisture Sensitive
- Hydrolytic Sensitivity
- 8 · 8: reacts rapidly with moisture, water, protic solvents
Safety & regulation
Safety information is for reference only and does not replace the supplier’s Safety Data Sheet (SDS), applicable regulations, or professional assessment.
GHS classification
GHS Classification
Danger
H301 (100%): Toxic if swallowed [Danger Acute toxicity, oral]
P203, P233, P260, P261, P262, P264, P270, P271, P272, P280, P284, P301+P316, P301+P330+P331, P302+P352, P302+P361+P354, P304+P340, P305+P354+P338, P316, P318, P321, P330, P333+P317, P342+P316, P361+P364, P362+P364, P363, P403, P405, and P501 (click each P-code to see the statement)
Aggregated GHS information provided per 45 reports by companies from 5 notifications to the ECHA C&L Inventory. Each notification may be associated with multiple companies.
Hazard information
Hazards SummaryA tissue irritant; [Hawley] Reacts violently with water; A corrosive substance that can cause injury to the skin, eyes, and respiratory tract; Inhalation may cause chemical pneumonitis; [MSDSonline] See Iodine for the TLV of Iodides.
Hazard Classes and CategoriesAcute Tox. 3 (100%)
Safety & protection
Threshold Limit Values (TLV)0.01 [ppm], inhalable fraction and vapor (iodides)
Toxicology
Adverse EffectsDermatotoxin - Skin burns.
Safety data
- tsca
- TSCA listed
- ridadr
- 3260
- risk_code
Chemistry & industry
Uses & manufacturing
General Manufacturing InformationSilane, tetraiodo-: ACTIVE
Applications
DescriptionSilicon Iodide is the iodide of silicon. It is a precursor to silicon amide. It is also applied in the manufacture and etching of silicon in microelectronics. Selective area regrowth of silicon-doped GaAs has been successfully achieved by chemical beam epitaxy (CBE) on dry etched trench structures. Silicon tetraiodide is useful for the above process in abrupt to manipulate metal-semiconductor field effect transistor (MESFET) and heterostructure field effect transistor (HFET). Silicon iodide can also be reduced as the source to form pure silicon and hydrogen iodide.
UsesSilicon(IV) iodide is used as a precursor to prepare silicon amides. It finds application in the manufacture and etching of silicon in microelectronics.
Related reactions
0 records
No reaction records under the current filter.
Compound notes
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