Silicon carbide → Silicon Carbide Silicon Nitride
Reaction equation
[C-:1]#[Si+:2].[N:3]12[Si:8]34[N:9]5[Si:6]61[N:7]3[Si:4]25[N:5]64>>[C-:1]#[Si+:2].[N:3]12[Si:8]34[N:9]5[Si:6]61[N:7]3[Si:4]25[N:5]64Participants
3
Procedure
The solid polymeric thermoset of Example 4 was heated under a flow (110 cc/min) of nitrogen at 3° C./min to 1200° C. and held at this temperature for 1 min followed by heating at 1° C./min to 1415° C. and holding at this temperature for 1 hr and heating at 1° C./min to 1450° C. and holding for 1.5 hr. XRD analysis showed the formation of pure silicon carbide and silicon nitride nanoparticles/nanostructures, which are embedded in an excess amount of silicon. The silicon nitride nanoparticles/nanostructures were formed mainly on the exterior part or outer surface of the sample, which was exposed to the nitrogen. The silicon carbide nanoparticles/nanostructures were mainly formed on the interior portion of the sample.
Workup
- temperatureThe solid polymeric thermoset of Example 4 was heated under a flow (110 cc/min) of nitrogen at 3° C./min to 1200° C.