窒化タンタル, 99.5% (metals basis)

使用Tantalum nitride is used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.

Tantalum nitride, TaN, is produced by direct synthesis of the elements at 1,100 °C (2,012 °F). Very pure TaN has been produced by spontaneous reaction of lithium amide, LiNH2, and TaCl5 . The compound is often added to cermets in 3–18 wt %. Ta3N5 is used as a red pigment in plastics and paints.