24621-21-4[N]#[Nb]CFJRGWXELQQLSA-UHFFFAOYSA-N24621-21-4化学的特性dark gray; fcc, a=0.4388nm; hardness, 8+ Mohs; electrical resistivity 78μοhm· cm; transition temp 15.2K; can be prepared by heating Nb metal in excess N2 or NH3 to 700°C–1100°C; used in the form of 99.5% pure sputtering target for increasing electrical stability of diodes, transistors, and integrated circuits [KIR81] [CIC73] [CER91]
安全情報は参考情報です。供給元の安全データシート(SDS)、適用法令、専門家による評価に代わるものではありません。
This chemical does not meet GHS hazard criteria for 100% (2 of 2) of all reports.
Not Classified
Aggregated GHS information provided per 2 reports by companies from 1 notifications to the ECHA C&L Inventory.
用途非酸化物系ニューセラミック材料、導電性・熱伝導性付加剤。
使用Niobium nitride (NbN) thin films were noticed at an early stage because of their critical transition temperatures as low as 16-17K which could find wide applications in superconducting microelectronics. Because of its complicated phase diagram, NbN is difficult to prepare in the pure face-centered cubic, rocksalt structure.
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