関与物質
| 役割 | 名称 | HCID | 仕込み量 |
|---|
| 反応物 | Tetraethoxysilane | HCID 6517 | — |
| 反応物 | Chlorotrifluoroethylene | HCID 6594 | — |
| 反応物 | CID 53628100 | HCID 178418400 | — |
| 溶媒 | Diethyl Ether | HCID 3283 | — |
| 生成物 | Trifluorovinyl triethoxysilane | HCID 21864279 | — |
反応手順
200 ml of freshly distilled dry Et2O is added to a 500 ml vessel (under an argon atmosphere). The vessel is cooled down to −80° C. and 15 g (0.129 mol) of CF2═CFCl gas is bubbled to Et2O. 100 ml (0.13 mol) of sec-BuLi is added dropwise during three hours. The temperature of the solution is kept below −60° C. all the time. The solution is stirred for 15 minutes and 29 ml (27.08 g, 0.130 mol) of Si(OEt)4 is added in small portions. The solution is stirred for over night allowing it to warm up to room temperature. Formed red solution is filtered and evaporated to dryness to result crude trifluorovinyltriethoxysilane, CF2═CFSi(OEt)3.
情報源と証拠
| DOI | 10.6084/m9.figshare.5104873.v1 |
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| 特許番号 | US07098346B2 |
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| 出典データセット | uspto-grants-2006_08 |
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| ORD ID | ord-5458c1810da14b22b17018798e405eb9 |
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| 出典メモ | uspto-grants-2006_08 |
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