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HRID 11976作成日:2026年10月24日

Tetraethoxysilane → Trifluorovinyl triethoxysilane

https://huagongshe.com/ja/reaction/11976

反応式

関与物質

役割名称HCID仕込み量
反応物TetraethoxysilaneHCID 6517—
反応物ChlorotrifluoroethyleneHCID 6594—
反応物CID 53628100HCID 178418400—
溶媒Diethyl EtherHCID 3283—
生成物Trifluorovinyl triethoxysilaneHCID 21864279—

反応条件

温度-80 °C

反応手順

200 ml of freshly distilled dry Et2O is added to a 500 ml vessel (under an argon atmosphere). The vessel is cooled down to −80° C. and 15 g (0.129 mol) of CF2═CFCl gas is bubbled to Et2O. 100 ml (0.13 mol) of sec-BuLi is added dropwise during three hours. The temperature of the solution is kept below −60° C. all the time. The solution is stirred for 15 minutes and 29 ml (27.08 g, 0.130 mol) of Si(OEt)4 is added in small portions. The solution is stirred for over night allowing it to warm up to room temperature. Formed red solution is filtered and evaporated to dryness to result crude trifluorovinyltriethoxysilane, CF2═CFSi(OEt)3.

情報源と証拠

DOI10.6084/m9.figshare.5104873.v1
特許番号US07098346B2
出典データセットuspto-grants-2006_08
ORD IDord-5458c1810da14b22b17018798e405eb9
出典メモuspto-grants-2006_08