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HRID 13726作成日:2026年10月25日

Vinyltriethoxysilane → Phosphonic acid, P-(2-(triethoxysilyl)ethyl)-, diethyl ester

https://huagongshe.com/reaction/13726

反応式

関与物質

役割名称HCID仕込み量
反応物VinyltriethoxysilaneHCID 6516—
反応物DiethylphosphiteHCID 3780918—
生成物Phosphonic acid, P-(2-(triethoxysilyl)ethyl)-, diethyl esterHCID 6979233%

反応手順

Compounds of Formula II can be synthesised via a free radical promoted addition of a dialkyl phosphite to vinyl trialkoxy silane and then distillation, according to the procedure of G. H. Barnes and M. P. David in J. Org. Chem., 25, 1191, (1960). In this paper Barnes and David reported the synthesis of a number of organosilicon phosphonate esters and acids. They utilised known procedures for the free radical addition of dialkyl phosphites to double bonds. The state of this art is described in Org. Reactions. Vol. 13, 218-222. They reacted diethyl phosphite with vinyl triethoxy silane at 120-130° C. in the presence of a free radical initiator. The desired product, (EtO)3SiCH2CH2PO(OEt)2, was obtained after careful distillation in 33% yield.

情報源と証拠

DOI10.6084/m9.figshare.5104873.v1
特許番号US07728159B2
出典データセットuspto-grants-2010_06
ORD IDord-898f78d568204e16861cf6649281d05a
出典メモuspto-grants-2010_06