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HRID 1378887作成日:2026年10月27日

Boron Nitride → Boron boron carbide

https://huagongshe.com/reaction/1378887

反応式

関与物質

役割名称HCID仕込み量
反応物Boron NitrideHCID 66227—
反応物Boron carbideHCID 123279—
反応物BoronHCID 5462311—
生成物Boron boron carbideHCID 131720199—
生成物Boron nitride boron carbideHCID 131720200—
生成物Boron boron nitride boron carbideHCID 131720201—

反応手順

It has thus been shown that this invention involves the fabrication of multilayer structures from thin films or coatings of boron, boron nitride, and boron carbide to form multilayer films or coatings of boron/boron carbide, boron nitride/boron carbide, and boron/boron nitride/boron carbide and involves processes which utilizes dc and rf magnetron sputtering, and simply changing the type of sputtering gas. The boron/boron carbide multilayers, are produced in an inert atmosphere, such as argon, helium, neon, krypton, and xenon, with argon being preferred; and the cubic boron nitride/boron carbide multilayers are produced in an alternating reactive and inert atmosphere with reactive gases such as nitrogen, ammonia, ammonia-nitrogen-argon, with nitrogen preferred, or a mixture of nitrogen with argon. The cubic boron nitride/boron carbide multilayers require alternate rf (c-BN) and dc (B4C) magnetron sputtering. The atmosphere may be varied during the processing to produce diffused (blended or graded) layers.

情報源と証拠

DOI10.6084/m9.figshare.5104873.v1
特許番号US05670252
出典データセットuspto-grants-1997_09
ORD IDord-43c7600af66a445f94efe180531a0f2b
出典メモuspto-grants-1997_09