化工社化工社 化学情報印刷レポート · 研究参考用
Triethoxysilane → Vinyltriethoxysilane
関与物質
| 役割 | 名称 | HCID | 仕込み量 |
|---|---|---|---|
| 反応物 | Triethoxysilane | HCID 13830 | — |
| 反応物 | Silane | HCID 23953 | — |
| 反応物 | Bis(triethoxysilyl)ethane | HCID 85266 | — |
| 生成物 | Vinyltriethoxysilane | HCID 6516 | 25% |
| 生成物 | Tetraethoxysilane | HCID 6517 | — |
反応手順
The reaction was carried out in accordance with the procedure of Comparative Example 2, except that the silane used was triethoxysilane and the reaction temperature was 150° C. The reaction was monitored by GPC and was completed in one hour. The major product formed was 1,2-bis(triethoxysilyl)ethane (72%), with vinyltriethoxysilane (25%) and tetraethoxysilane also being formed (3%). With a primary alkyl silane and at lower reaction temperatures, the undesired bis(silyl)ethane was the main reaction product.
情報源と証拠
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|---|
| 特許番号 | US04579965 |
| 出典データセット | uspto-grants-1986_04 |
| ORD ID | ord-b6b83ade960f4b93a0072cd9f6b2af6c |
| 出典メモ | uspto-grants-1986_04 |