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HRID 1596699作成日:2026年10月27日

Chlorotrimethylsilane → N-allyl-3-trimethylsilylpropiolic amide

https://huagongshe.com/reaction/1596699

反応式

関与物質

役割名称HCID仕込み量
反応物ChlorotrimethylsilaneHCID 6397—
反応物DiethoxymethaneHCID 10024—
反応物Allyl isocyanateHCID 15123—
反応物TrimethylsilylacetyleneHCID 66111—
反応物Lithium diisopropylamideHCID 2724682—
反応物ButyllithiumHCID 178418339—
溶媒TetrahydrofuranHCID 8028—
溶媒tert-Butyl methyl etherHCID 15413—
生成物N-allyl-3-trimethylsilylpropiolic amideHCID 11217610—

反応条件

温度0 °C

反応手順

The reaction is carried out by dissolving trimethylsilylacetylene in an solvent. Preferred solvents include ethereals such as THF, diethoxymethane and t-butylmethyl ether. At about 0° C., a strong base is added dropwise over a period of about 15 minutes. Examples of strong bases are n-butyl lithium and lithium diisopropyl amide. While still maintaining the temperature near 0° C., a solution of allyl isocyanate in solvent is added dropwise over about 15 minutes. This is followed by the dropwise addition of trimethylsilyl chloride. After holding the reaction mixture at about 0 to about 10° C. for about 3 hours, the reaction is quenched with aqueous ammonium chloride and extracted with dichloromethane. The solvent is evaporated to yield the product, N-allyl-3-trimethylsilylpropiolic amide.

情報源と証拠

DOI10.6084/m9.figshare.5104873.v1
特許番号US06291513B1
出典データセットuspto-grants-2001_09
ORD IDord-a31367e9ef604a1bad0292483a4caf64
出典メモuspto-grants-2001_09