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HRID 217548作成日:2026年10月24日

Mesitylene → Anthracene

https://huagongshe.com/ja/reaction/217548

反応式

関与物質

役割名称HCID仕込み量
反応物MesityleneHCID 7947—
反応物AnthracenecarboxaldehydeHCID 35864—
反応物1-VinylanthraceneHCID 13907058—
生成物AnthraceneHCID 8418—

反応条件

温度150 °C

反応手順

Approximately 10 mmol mesitylene solution of vinylanthracene (VA) or anthraldehyde (AnA) was put in a round bottom flask and bubbled with nitrogen or argon gas for at least 30 min. A piece of the H-terminated silicon substrate was then immersed in the solution and allowed to react with VA or AnA for about 12 h under reflux at about 150° C. in an oil bath. During the reaction, the solution was also purged with nitrogen (or argon) to eliminate dissolved oxygen and to prevent the substrate from being oxidized. After the reaction, the substrate derivatized with VA or AnA was rinsed with dichloromethane, acetonitrile and methanol, and dried under a stream of nitrogen gas. The derivatization of the H-terminated surface with anthracene moieties as described in Example 3 is illustrated in FIG. 6.

情報源と証拠

DOI10.6084/m9.figshare.5104873.v1
特許番号US08197650B2
出典データセットuspto-grants-2012_06
ORD IDord-f58781bb35a2402ab83b7ad0e71ac9f1
出典メモuspto-grants-2012_06