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Dichlorodimethylsilane → di(1H-inden-1-yl)dimethylsilane
関与物質
| 役割 | 名称 | HCID | 仕込み量 |
|---|---|---|---|
| 反応物 | Dichlorodimethylsilane | HCID 6398 | — |
| 反応物 | Indene | HCID 7219 | — |
| 反応物 | Butyllithium | HCID 178418339 | — |
| 反応物 | HCID 178506815 | HCID 178506815 | — |
| 生成物 | di(1H-inden-1-yl)dimethylsilane | HCID 599429 | 71% |
反応手順
In detail, in Japanese Patent Laid-Open Publication No. 221285/1990 for example, a solution of an indenyl lithium salt prepared from indene and n-butyllithium is slowly added to a dimethyldichlorosilane solution, and they are reacted with each other overnight to obtain dimethyldi(1-indenyl)silane in a 71% yield. In Japanese Patent Laid-Open Publication No. 268307/1992, dimethyldi (2-methyl-1-indenyl) silane is obtained in a 16% yield in a manner similar to the above.
情報源と証拠
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|---|
| 特許番号 | US05360921 |
| 出典データセット | uspto-grants-1994_11 |
| ORD ID | ord-ce9b78dae72b4ddc992262c705339d43 |
| 出典メモ | uspto-grants-1994_11 |