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HRID 366986作成日:2026年10月26日

Silicon carbide → Methane

https://huagongshe.com/reaction/366986

反応式

関与物質

役割名称HCID仕込み量
反応物Silicon carbideHCID 9863—
反応物Trisilicon tetranitrideHCID 3084099—
触媒Yttrium oxideHCID 159374—
溶媒EthanolHCID 702—
生成物MethaneHCID 297—
生成物Silicon carbideHCID 9863—
生成物Trisilicon tetranitrideHCID 3084099—

反応手順

644 g of a silicon nitride powder (SN-E10 manufactured by Ube Industries, Ltd.; average particle size: 0.3 μm), 276 g of a silicon carbide (beta random ultrafine grade manufactured by Ibiden Co., Ltd.; average particle size: 0.27 μm), 80 g of an yttrium oxide powder (manufactured by Nippon Yttrium Co., Ltd.; average particle size: 1.4 μm) and 1000 g of ethanol as the dispersion medium were blended under pulverizing in a ball mill for 18 hours using 800 g of silicon nitride balls as a tumbling media. The resultant mixture was dried to obtain a starting ceramic powder mixture having a BET specific surface area of 12.1 m2 /g. The above amounts, 644 g of silicon nitride and 276 g of silicon carbide, correspond to theoretical amounts of silicon nitride and silicon carbide formed from 578.6 g of silicon and 82.9 g of carbon black used in Example 1.

情報源と証拠

DOI10.6084/m9.figshare.5104873.v1
特許番号US06133180
出典データセットuspto-grants-2000_10
ORD IDord-32798f81733e4199a14a2cd19bf989ae
出典メモuspto-grants-2000_10