関与物質
| 役割 | 名称 | HCID | 仕込み量 |
|---|
| 反応物 | Silicon carbide | HCID 9863 | — |
| 反応物 | Trisilicon tetranitride | HCID 3084099 | — |
| 触媒 | Yttrium oxide | HCID 159374 | — |
| 溶媒 | Ethanol | HCID 702 | — |
| 生成物 | Methane | HCID 297 | — |
| 生成物 | Silicon carbide | HCID 9863 | — |
| 生成物 | Trisilicon tetranitride | HCID 3084099 | — |
反応手順
644 g of a silicon nitride powder (SN-E10 manufactured by Ube Industries, Ltd.; average particle size: 0.3 μm), 276 g of a silicon carbide (beta random ultrafine grade manufactured by Ibiden Co., Ltd.; average particle size: 0.27 μm), 80 g of an yttrium oxide powder (manufactured by Nippon Yttrium Co., Ltd.; average particle size: 1.4 μm) and 1000 g of ethanol as the dispersion medium were blended under pulverizing in a ball mill for 18 hours using 800 g of silicon nitride balls as a tumbling media. The resultant mixture was dried to obtain a starting ceramic powder mixture having a BET specific surface area of 12.1 m2 /g. The above amounts, 644 g of silicon nitride and 276 g of silicon carbide, correspond to theoretical amounts of silicon nitride and silicon carbide formed from 578.6 g of silicon and 82.9 g of carbon black used in Example 1.
情報源と証拠
| DOI | 10.6084/m9.figshare.5104873.v1 |
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| 特許番号 | US06133180 |
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| 出典データセット | uspto-grants-2000_10 |
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| ORD ID | ord-32798f81733e4199a14a2cd19bf989ae |
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| 出典メモ | uspto-grants-2000_10 |
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