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HRID 370311作成日:2026年10月27日

Chlorotrimethylsilane → N-allyl-3-trimethylsilylpropiolic amide

https://huagongshe.com/reaction/370311

反応式

関与物質

役割名称HCID仕込み量
反応物ChlorotrimethylsilaneHCID 6397—
反応物DiethoxymethaneHCID 10024—
反応物Allyl isocyanateHCID 15123—
反応物Lithium diisopropylamideHCID 2724682—
反応物ButyllithiumHCID 178418339—
溶媒TetrahydrofuranHCID 8028—
溶媒tert-Butyl methyl etherHCID 15413—
生成物N-allyl-3-trimethylsilylpropiolic amideHCID 11217610—

反応条件

温度0 °C

反応手順

Preferred solvents include ethereals such as THF, diethoxymethane and t-butylmethyl ether. At about 0° C., a strong base is added dropwise over a period of about 15 minutes. Examples of strong bases are n-butyl lithium and lithium diisopropyl amide. While still maintaining the temperature near 0° C., a solution of allyl isocyanate in solvent is added dropwise over about 15 minutes. This is followed by the dropwise addition of trimethylsilyl chloride. After holding the reaction mixture at about 0 to about 10° C. for about 3 hours, the reaction is quenched with aqueous ammonium chloride and extracted with dichloromethane. The solvent is evaporated to yield the product, N-allyl-3-trimethylsilylpropiolic amide. ##STR8## wherein TMS is trimethylsilyl, the solvents are methylene chloride or DCE (1,2-dichloroethane), and the acid catalysts are aluminum chloride (AlCl3), ferric chloride (FeCl3) or methanesulfonic acid (MeSO3).

情報源と証拠

DOI10.6084/m9.figshare.5104873.v1
特許番号US06140511
出典データセットuspto-grants-2000_10
ORD IDord-767ac93444074d5292a52bfc631b232a
出典メモuspto-grants-2000_10