Tetraethoxysilane → Tmos gaps

関与物質

反応手順

Substrate film casting procedure—HEC and TEOS and GAPS HEC (1.25 g) was completely dissolved in deionized water (250 mL) and stirred vigorously for about 16 hours to provide a 0.5 wt % solution. Then 0.875 mL tetramethylorthosilicate (TMOS) and 0.125 mL γ-aminopropyltriethoxysilane (GAPS) were added to the 50 g of the HEC solution with stirring to provide a 1:3.5:0.5 (w:v:v) HEC/TMOS/GAPS solution. After approximately 10 minutes, the combined HEC/silica solution was added to a well plate as above. The solution was allowed to evaporate at room temperature 16 hours with lid on, followed by 75° C. for 8 hours, until dry. The plates were sterilized by UV irradiation (1 hr @ 366 nm).

情報源と証拠