関与物質
| 役割 | 名称 | HCID | 仕込み量 |
|---|
| 反応物 | Acetylene | HCID 6326 | — |
| 反応物 | Vinyltris(dimethylamino)silane | HCID 13548100 | — |
| 生成物 | 1-Ethyl-N,N,N',N',N'',N''-hexamethylsilanetriamine | HCID 207257 | 85% |
反応手順
The reaction was carried out as in Example 3; however, the acetylene pressure was increased to 150 psig and the reaction temperature was maintained at 240° C. Vinyltris(dimethylamino)silane was the single major product at a yield of 85% theoretical. Ethyltris(dimethylamino)silane and 1,2-bis(trisdimethylamino)silylethane were also formed, each in approximately a 2 to 3% yield. Vinyltris(dimethylamino)silane was also formed in approximately 10% yield.
情報源と証拠
| DOI | 10.6084/m9.figshare.5104873.v1 |
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| 特許番号 | US04558146 |
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| 出典データセット | uspto-grants-1985_12 |
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| ORD ID | ord-51e82ae9882b46439ba9ab11a5f08b0c |
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| 出典メモ | uspto-grants-1985_12 |
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