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HRID 972165作成日:2026年10月27日

Silica → Ammonia

https://huagongshe.com/reaction/972165

反応式

関与物質

役割名称HCID仕込み量
反応物SilicaHCID 24261—
反応物Trisilicon tetranitrideHCID 3084099—
生成物AmmoniaHCID 222—
生成物SilaneHCID 23953—
生成物Trisilicon tetranitrideHCID 3084099—

反応手順

Next, a middle silicon nitride layer 12 is deposited onto the first layer 10 of silicon dioxide previously deposited. Silicon nitride is produced from the reaction of silane (SiH4) with nitrogen and ammonia (NH3). The nitride deposition is performed, for example, in a "pancake style"]reactor. Typically, 3.5 minutes is required to deposit 500 Angstroms of Si3N4 at 800° C.

情報源と証拠

DOI10.6084/m9.figshare.5104873.v1
特許番号US04052251
出典データセットuspto-grants-1977_10
ORD IDord-6f007f246b7a4bd4a4b23dffc3c83d94
出典メモuspto-grants-1977_10