化工社化工社 化学情報印刷レポート · 研究参考用
Silica → Ammonia
関与物質
| 役割 | 名称 | HCID | 仕込み量 |
|---|---|---|---|
| 反応物 | Silica | HCID 24261 | — |
| 反応物 | Trisilicon tetranitride | HCID 3084099 | — |
| 生成物 | Ammonia | HCID 222 | — |
| 生成物 | Silane | HCID 23953 | — |
| 生成物 | Trisilicon tetranitride | HCID 3084099 | — |
反応手順
Next, a middle silicon nitride layer 12 is deposited onto the first layer 10 of silicon dioxide previously deposited. Silicon nitride is produced from the reaction of silane (SiH4) with nitrogen and ammonia (NH3). The nitride deposition is performed, for example, in a "pancake style"]reactor. Typically, 3.5 minutes is required to deposit 500 Angstroms of Si3N4 at 800° C.
情報源と証拠
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|---|
| 特許番号 | US04052251 |
| 出典データセット | uspto-grants-1977_10 |
| ORD ID | ord-6f007f246b7a4bd4a4b23dffc3c83d94 |
| 出典メモ | uspto-grants-1977_10 |