질화 알루미늄
질화알루미늄 · 질화알루미늄(ALUMINUMNITRIDE) · AlN · ALUMINIUM NITRIDE · ALN A · ALN C · ALN B · ALN AT
식별자 및 물리적 특성
| CAS No. | 24304-00-5 |
|---|---|
| 분자식 | AlN |
| 평균 분자량 | 40.988 g/mol |
| 단동위원소 질량 | 40.98461263 g/mol |
| SMILES | [N]#[Al] |
| InChIKey | PIGFYZPCRLYGLF-UHFFFAOYSA-N |
| PubChem CID | 90455 |
| ChEBI | CHEBI:50884 |
| EC No. | 246-140-8 |
| DTXSID | DTXSID8066977 |
| 현지명 | 질화 알루미늄 |
화학 및 물리적 성질
| 극성 표면적 | 23.8 |
|---|---|
| 수소 결합 공여자 수 | 0 |
| 수소 결합 수용자 수 | 1 |
| 회전 가능 결합 수 | 0 |
| 무거운 원자 수 | 2 |
| 형식 전하 | 0 |
| 복잡도 | 10 |
| 물질 분류 | Metals -> Metals, Inorganic Compounds |
| SpringerMaterials Properties | valence band parameter |
| Physical Description | CBIOther SolidColorless translucent solid[Merck Index] Pale grey or green-grey powderOdor of ammonia in moist airDecomposes in water[Materion Advanced Chemicals MSDS] |
| 녹는점 | >2200 °C (lit.) |
| 밀도 | 3.26 g/mL at 25 °C (lit.) |
| 증기압 | 0Pa at 25℃ |
| 용해도 | 무기산에 용해됩니다. |
| 물리적 상태 | 가루 |
| 색상 | 흰색에서 연한 노란색 |
| 비중 | 3.26 |
| 용해도 | 분해될 수 있음 |
| 비열 | Cp(crystal): 0.73 J/(g·K), at 25℃ |
| Merck | 14,353 |
| 안정성 | 안정적인. |
| InChI | 1S/Al.N |
| InChIKey | PIGFYZPCRLYGLF-UHFFFAOYSA-N |
| SMILES | N#[Al] |
| LogP(분배 계수) | 0 at 25℃ |
| NIST | Aluminum nitride(24304-00-5) |
| EPA | Aluminum nitride (AlN) (24304-00-5) |
화학적 성질
Crystalline solid.
안전 및 규제
| GHS 분류 | This chemical does not meet GHS hazard criteria for 1.5% (5 of 328) of reports.WarningH315 (88.7%): Causes skin irritation [Warning Skin corrosion/irritation]P260, P261, P264, P264+P265, P271, P273, P280, P302+P352, P304+P340, P305+P351+P338, P319, P321, P332+P317, P337+P317, P362+P364, P391, P403+P233, P405, and P501 (click each P-code to see the statement)Aggregated GHS information provided per 328 reports by companies from 19 notifications to the ECHA C&L Inventory. Each notification may be associated with multiple companies.Not Classified |
|---|---|
| 규제 정보 | Chemical: Aluminium nitride (AlN)Aluminum nitride (AlN) is listed on the EPA's Chemical Data Reporting (CDR) system. Manufacturers and importers of Aluminum nitride (AlN) are required to report information about their production and use of this chemical to the EPA under the Toxic Substances Control Act (TSCA). (40 eCFR Part 711)Status: Active Update: 13-08-2021 https://echa.europa.eu/registration-dossier/-/registered-dossier/17707 |
| 유해성 요약 | Causes lung changes and liver weight changes in acute intratracheal studies of rats[RTECS] Decomposed by water forming ammonia and aluminum hydroxideMay cause irritation and possibly burnsInhalation may cause corrosive injuries to upper respiratory tract and lungs[Materion Advanced Chemicals MSDS] See NITRIDES. |
| Hazard Classes and Categories | Skin Irrit. 2 (88.7%) |
| Minimum Risk Level | Intermediate Oral: 1.0 mg/kg/day (L134) Chronic Oral: 1.0 mg/kg/day (L134) |
| Treatment | EYES: irrigate opened eyes for several minutes under running water. INGESTION: do not induce vomiting. Rinse mouth with water (never give anything by mouth to an unconscious person). Seek immediate medical advice. SKIN: should be treated immediately by rinsing the affected parts in cold running water for at least 15 minutes, followed by thorough washing with soap and water. If necessary, the person should shower and change contaminated clothing and shoes, and then must seek medical attention. INHALATION: supply fresh air. If required provide artificial respiration. |
| 건강 영향 | Aluminum targets the nervous system and causes decreased nervous system performance and is associated with altered function of the blood-brain barrier. The accumulation of aluminum in the body may cause bone or brain diseases. High levels of aluminum have been linked to Alzheimer's disease. A small percentage of people are allergic to aluminium and experience contact dermatitis, digestive disorders, vomiting or other symptoms upon contact or ingestion of products containing aluminium. (L739, L740) |
용도
용도
Aluminum nitride possesses very high thermal conductivity and effectively used in the ceramic industry. It finds application in deep ultraviolet optoelectronics, steel production, dielectric layers in optical storage media, chip carriers and as a crucible to grow crystals of gallium arsenide. It is also used as a radio frequency filter, which finds application in mobile phones. Further, it is used as a circuit carrier in semiconductors. In addition to this, it is used as a heat-sink in light-emitting diode lighting technology.
제조 및 합성 방법
제조 방법
Aluminum nitride is conveniently prepared by an electric arc between aluminum electrodes in a nitrogen atmosphere. Crucibles of the pressed powder, sintered at 1985°C, are resistant to liquid aluminum at 1985°C, to liquid gallium at 1316°C, and to liquid boron oxide at 1093°C. Aluminum nitride has good thermal shock resistance and is only slowly oxidized in air (1.3% converted to Al2O3 in 30 h at 1427°C). It is inert to hydrogen at 1705°C but is attacked by chlorine at 593°C.