24621-21-4[N]#[Nb]CFJRGWXELQQLSA-UHFFFAOYSA-N24621-21-4dark gray; fcc, a=0.4388nm; hardness, 8+ Mohs; electrical resistivity 78μοhm· cm; transition temp 15.2K; can be prepared by heating Nb metal in excess N2 or NH3 to 700°C–1100°C; used in the form of 99.5% pure sputtering target for increasing electrical stability of diodes, transistors, and integrated circuits [KIR81] [CIC73] [CER91]
안전 정보는 참고용이며, 공급업체의 물질안전보건자료(SDS), 관련 법규 및 전문가 평가를 대체하지 않습니다.
This chemical does not meet GHS hazard criteria for 100% (2 of 2) of all reports.
Not Classified
Aggregated GHS information provided per 2 reports by companies from 1 notifications to the ECHA C&L Inventory.
용도Niobium nitride (NbN) thin films were noticed at an early stage because of their critical transition temperatures as low as 16-17K which could find wide applications in superconducting microelectronics. Because of its complicated phase diagram, NbN is difficult to prepare in the pure face-centered cubic, rocksalt structure.
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