Hafnium chloride (HfCl4) (6CI,8CI); Hafnium chloride; Hafnium tetrachloride; Hafnium(IV) chloride; Hafnium chloride (HfCl4), (T-4)- → HCID 178504164, 화합물
반응식
[CH3:1][Si:2]([CH3:23])([CH3:22])[C:3]1[CH:4]=[C:5]([C:13]2[CH2:14][C:15]3[C:20]([CH:21]=2)=[CH:19][CH:18]=[CH:17][CH:16]=3)[CH:6]=[C:7]([Si:9]([CH3:12])([CH3:11])[CH3:10])[CH:8]=1.[CH2:24]([Li])[CH2:25][CH2:26][CH3:27].[Cl-:29].[Cl-].[Cl-].[Cl-].[Hf+4:33]>C(OCC)C>[Cl-:29].[Cl-:29].[CH3:12][Si:9]([CH3:10])([CH3:11])[C:7]1[CH:6]=[C:5]([C:13]2[CH:14]([Hf+2:33][CH:24]3[C:15]4[C:27](=[CH:20][CH:21]=[CH:13][CH:14]=4)[CH:26]=[C:25]3[C:5]3[CH:6]=[C:7]([Si:9]([CH3:10])([CH3:12])[CH3:11])[CH:8]=[C:3]([Si:2]([CH3:23])([CH3:1])[CH3:22])[CH:4]=3)[C:15]3[C:20]([CH:21]=2)=[CH:19][CH:18]=[CH:17][CH:16]=3)[CH:4]=[C:3]([Si:2]([CH3:23])([CH3:22])[CH3:1])[CH:8]=1참가 물질
반응물 3
생성물 1
시약·촉매·용매 1
반응 조건
- 온도
- -10 °C
실험 절차
2-(3,5-Bis(trimethylsilyl)phenyl)indene (22.3 g, 0.066 mol) and anhydrous diethyl ether (250 mL) were placed in a 1 L three-necked flask under argon. n-Butyllithium (41 mL of a 1.6 M solution in hexanes, 0.066 mol) was added over a thirty minute period at 0° C. The solution was stirred for an additional two hours. Hafnium tetrachloride (10.5 g, 0.033 mol) was added incrementally over a one-hour period. The mixture was then stirred overnight. The ethereal solution was chilled to −10° C. and the solids were collected by filtration. The solids were taken up in 300 mL of dichloromethane and the residual solids were removed by filtration through celite. The celite was washed with an additional 100 mL of dichloromethane and the solvents were evaporated to give 17.3 g of bis(2-(3,5-bis(trimethylsilyl)phenyl)indenyl)hafnium dichloride product (56% yield).
후처리
- stirringThe mixture was then stirred overnight
- filtrationthe solids were collected by filtration
- customthe residual solids were removed by filtration through celite
- washThe celite was washed with an additional 100 mL of dichloromethane
- customthe solvents were evaporated
출처 및 근거
- ORD 기록
- ord-b3afda65ad6345498d1d88a4b6051006
- 출처 데이터셋
- uspto-grants-2002_11
- 특허 번호
- US06479424B1
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