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Boron tribromide → HCID 86601168, 화합물

HRID 1173317
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HRID 1173317 반응식
B(Br)(Br)Br.C[O:6][C:7]1[CH:12]=[C:11]([C:13]([Cl:17])=[C:14]([Cl:16])[Cl:15])[CH:10]=[C:9]([C:18]([Cl:22])=[C:19]([Cl:21])[Cl:20])[CH:8]=1>C(Cl)Cl>[Cl:17][C:13]([C:11]1[CH:12]=[C:7]([OH:6])[CH:8]=[C:9]([C:18]([Cl:22])=[C:19]([Cl:20])[Cl:21])[CH:10]=1)=[C:14]([Cl:16])[Cl:15]
참가 물질반응 조건실험 절차후처리출처 및 근거반응 노트

참가 물질

4

반응물 2

HCID 25134Boron tribromideHCID 86601166HCID 86601166, 화합물

생성물 1

HCID 86601168HCID 86601168, 화합물

시약·촉매·용매 1

HCID 6344Dichloromethane용매2회

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온도
0 °C

실험 절차

A solution of 0.153 g (0.6 mmol) of boron tribromide in 0.5 mL of CH2Cl2 was magnetically stirred at 0° C. with an external ice-water bath, while a solution of 0.093 g (0.25 mmol) of the product of Step C in 0.5 mL CH2Cl2 was added over a period of 5 min. The reaction mixture was stirred an additional 30 min at 0° C. then allowed to warm to room temperature and stirring was continued overnight. The reaction was again cooled to 0° C. and quenched by addition of 1.0 mL water. The organic layer was separated and then washed with 2 N NaOH. The aqueous extracts were acidified with 1 N HCl and extracted with ether. The organic extracts were combined, washed with brine, dried (MgSO4), filtered and evaporated in vacuo. The residue was purified on a silica gel flash chromatography column eluted with 5% EtOAc-hexane. Evaporation of the purified fractions and drying in vacuo afforded the title compound.

후처리

  1. additionwas added over a period of 5 min
  2. temperatureto warm to room temperature
  3. stirringstirring
  4. waitwas continued overnight
  5. temperatureThe reaction was again cooled to 0° C.
  6. customquenched by addition of 1.0 mL water
  7. customThe organic layer was separated
  8. washwashed with 2 N NaOH
  9. extractionextracted with ether
  10. washwashed with brine
  11. dry with materialdried (MgSO4)
  12. filtrationfiltered
  13. customevaporated in vacuo
  14. customThe residue was purified on a silica gel flash chromatography column
  15. washeluted with 5% EtOAc-hexane
  16. customEvaporation of the purified fractions
  17. customdrying in vacuo

출처 및 근거

ORD 기록
ord-36aaad67a9ac48e8be7604920297096f
출처 데이터셋
uspto-grants-2010_11
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US07834062B2

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