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Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
HRID 11976생성일: 2026년 10월 23일

Tetraethoxysilane → Trifluorovinyl triethoxysilane

https://huagongshe.com/ko/reaction/11976

반응식

참여 물질

역할이름HCID투입량
반응물TetraethoxysilaneHCID 6517—
반응물ChlorotrifluoroethyleneHCID 6594—
반응물CID 53628100HCID 178418400—
용매Diethyl EtherHCID 3283—
생성물Trifluorovinyl triethoxysilaneHCID 21864279—

반응 조건

온도-80 °C

반응 단계

200 ml of freshly distilled dry Et2O is added to a 500 ml vessel (under an argon atmosphere). The vessel is cooled down to −80° C. and 15 g (0.129 mol) of CF2═CFCl gas is bubbled to Et2O. 100 ml (0.13 mol) of sec-BuLi is added dropwise during three hours. The temperature of the solution is kept below −60° C. all the time. The solution is stirred for 15 minutes and 29 ml (27.08 g, 0.130 mol) of Si(OEt)4 is added in small portions. The solution is stirred for over night allowing it to warm up to room temperature. Formed red solution is filtered and evaporated to dryness to result crude trifluorovinyltriethoxysilane, CF2═CFSi(OEt)3.

출처 및 근거

DOI10.6084/m9.figshare.5104873.v1
특허 번호US07098346B2
출처 데이터셋uspto-grants-2006_08
ORD IDord-5458c1810da14b22b17018798e405eb9
출처 메모uspto-grants-2006_08