Chlorotrimethylsilane → HCID 17961254, 화합물

반응식

[CH3:1][C:2]1[CH:10]=[CH:9][C:8]2[NH:7][C:6]3[C:11]4[C:16]([CH2:17][C:5]=3[C:4]=2[CH:3]=1)=[CH:15][CH:14]=[CH:13][CH:12]=4.C([Li])CCC.[CH3:23][Si:24]([CH3:27])([CH3:26])Cl>>[CH3:23][Si:24]([CH3:27])([CH3:26])[N:7]1[C:8]2[CH:9]=[CH:10][C:2]([CH3:1])=[CH:3][C:4]=2[C:5]2[CH2:17][C:16]3[C:11]([C:6]1=2)=[CH:12][CH:13]=[CH:14][CH:15]=3

참가 물질

반응물 3

HCID 6397Chlorotrimethylsilane

HCID 222470798-Methyl-5,10-dihydroindeno[1,2-b]indole

HCID 178418339Butyllithium

생성물 1

HCID 17961254HCID 17961254, 화합물

실험 절차

The general procedure of Example A is followed. 8-Methyl-5, 10-dihydroindeno[1,2-b]indole reacts with n-butyllithium and the product then reacts with trimethylchlorosilane to form 5-trimethylsilyl-8-methyl-5, 10-dihydroindeno[1,2-b]indole. The later reacts with n-butyllithium to form a lithium salt, which reacts with zirconium tetrachloride to give Catalyst IV.

출처 및 근거

ORD 기록: ord-e8fdc1c466a64d619104bf3a81372020
출처 데이터셋: uspto-grants-2003_04
DOI: 10.6084/m9.figshare.5104873.v1
특허 번호: US06541583B2

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