참여 물질
| 역할 | 이름 | HCID | 투입량 |
|---|
| 반응물 | Gallium | HCID 5360835 | — |
| 반응물 | Gallium phthalocyanine | HCID 136138306 | — |
| 반응물 | HCID 178526210 | HCID 178526210 | — |
| 생성물 | Phthalocyanine | HCID 86280045 | — |
| 생성물 | HCID 178526210 | HCID 178526210 | — |
반응 단계
The present invention provides a process for producing hydroxygallium phthalocyanine crystals, which process comprises reacting a gallium compound with an excess of a compound forming a phthalocyanine ring to prepare gallium phthalocyanine, subjecting the resulting gallium. phthalocyanine to acid pasting to obtain a hydroxygallium phthalocyanine crystal having intense diffraction peaks at Bragg angles (2θ±0.2°) of 6.9°, 13.2° to 14.2°, 16.5°, and 26.4° or of 7.0°, 13.4°, 16.6°, 26.0°, and 26.7° in Cukα characteristic X-ray diffractometry, and transforming the resulting crystal by a solvent treatment into hydroxygallium phthalocyanine crystals having intense diffraction peaks at Bragg angles (2θ±0.2°) of 7.5°, 9.9°, 12.5°, 16.3°, 18.6°, 25.1°, and 28.3° in Cukα characteristic X-ray diffractometry.
출처 및 근거
| DOI | 10.6084/m9.figshare.5104873.v1 |
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| 특허 번호 | US05756247 |
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| 출처 데이터셋 | uspto-grants-1998_05 |
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| ORD ID | ord-1e0339652afd487bbfe2fc7741c11ad8 |
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| 출처 메모 | uspto-grants-1998_05 |
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