Trifluoroiodoethylene → Trifluorovinyl triethoxysilane

HRID 1349926

반응식

HRID 1349926 반응식
I[C:2]([F:6])=[C:3]([F:5])[F:4].C([Li])(CC)C.Cl[Si:13]([O:20][CH2:21][CH3:22])([O:17][CH2:18][CH3:19])[O:14][CH2:15][CH3:16]>C(OCC)C>[F:6][C:2]([Si:13]([O:20][CH2:21][CH3:22])([O:17][CH2:18][CH3:19])[O:14][CH2:15][CH3:16])=[C:3]([F:5])[F:4]

참가 물질

5

반응물 3

HCID 67755TrifluoroiodoethyleneHCID 78398TriethoxychlorosilaneHCID 178418400CID 53628100

생성물 1

HCID 21864279Trifluorovinyl triethoxysilane

시약·촉매·용매 1

HCID 3283Diethyl Ether용매

반응 조건

온도
-78 °C

실험 절차

A dry 3-neck round bottom flask with nitrogen and stir-bar is charged with approximately (9.5 mL, 14.5 g at −78° C., 0.12 mol) iodotrifluoroethylene and 200 mL diethylether pre-cooled to −78° C. Sec-butyl lithium (89 mL, 1.4 M solution, 0.12 mol) is added dropwise over 1 hour. Solution is allowed to stir for 5 minutes at −78° C. Chlorotriethoxysilane (24.35 mL, 0.12 mol) is added over 5 minutes at −78° C. The solution is allowed to warm slowly and allowed to stir overnight. A clear yellow solution remains. Fractional distillation is used to purify the product.

후처리

  1. temperatureto warm slowly
  2. stirringto stir overnight
  3. distillationFractional distillation
  4. customto purify the product

출처 및 근거

ORD 기록
ord-31771d6e79344c46809a9b46bb61c434
출처 데이터셋
uspto-grants-2007_05
특허 번호
US07214475B2

연결된 노트

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