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HRID 13726생성일: 2026년 10월 23일

Vinyltriethoxysilane → Phosphonic acid, P-(2-(triethoxysilyl)ethyl)-, diethyl ester

https://huagongshe.com/ko/reaction/13726

반응식

참여 물질

역할이름HCID투입량
반응물VinyltriethoxysilaneHCID 6516—
반응물DiethylphosphiteHCID 3780918—
생성물Phosphonic acid, P-(2-(triethoxysilyl)ethyl)-, diethyl esterHCID 6979233%

반응 단계

Compounds of Formula II can be synthesised via a free radical promoted addition of a dialkyl phosphite to vinyl trialkoxy silane and then distillation, according to the procedure of G. H. Barnes and M. P. David in J. Org. Chem., 25, 1191, (1960). In this paper Barnes and David reported the synthesis of a number of organosilicon phosphonate esters and acids. They utilised known procedures for the free radical addition of dialkyl phosphites to double bonds. The state of this art is described in Org. Reactions. Vol. 13, 218-222. They reacted diethyl phosphite with vinyl triethoxy silane at 120-130° C. in the presence of a free radical initiator. The desired product, (EtO)3SiCH2CH2PO(OEt)2, was obtained after careful distillation in 33% yield.

출처 및 근거

DOI10.6084/m9.figshare.5104873.v1
특허 번호US07728159B2
출처 데이터셋uspto-grants-2010_06
ORD IDord-898f78d568204e16861cf6649281d05a
출처 메모uspto-grants-2010_06