Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
Vinyltriethoxysilane → Phosphonic acid, P-(2-(triethoxysilyl)ethyl)-, diethyl ester
참여 물질
| 역할 | 이름 | HCID | 투입량 |
|---|---|---|---|
| 반응물 | Vinyltriethoxysilane | HCID 6516 | — |
| 반응물 | Diethylphosphite | HCID 3780918 | — |
| 생성물 | Phosphonic acid, P-(2-(triethoxysilyl)ethyl)-, diethyl ester | HCID 69792 | 33% |
반응 단계
Compounds of Formula II can be synthesised via a free radical promoted addition of a dialkyl phosphite to vinyl trialkoxy silane and then distillation, according to the procedure of G. H. Barnes and M. P. David in J. Org. Chem., 25, 1191, (1960). In this paper Barnes and David reported the synthesis of a number of organosilicon phosphonate esters and acids. They utilised known procedures for the free radical addition of dialkyl phosphites to double bonds. The state of this art is described in Org. Reactions. Vol. 13, 218-222. They reacted diethyl phosphite with vinyl triethoxy silane at 120-130° C. in the presence of a free radical initiator. The desired product, (EtO)3SiCH2CH2PO(OEt)2, was obtained after careful distillation in 33% yield.
출처 및 근거
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|---|
| 특허 번호 | US07728159B2 |
| 출처 데이터셋 | uspto-grants-2010_06 |
| ORD ID | ord-898f78d568204e16861cf6649281d05a |
| 출처 메모 | uspto-grants-2010_06 |