Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
Vinyltriethoxysilane → Bis(triethoxysilyl)ethane
참여 물질
| 역할 | 이름 | HCID | 투입량 |
|---|---|---|---|
| 반응물 | Vinyltriethoxysilane | HCID 6516 | — |
| 반응물 | Triethoxysilane | HCID 13830 | — |
| 반응물 | Silane | HCID 23953 | — |
| 생성물 | Tetraethoxysilane | HCID 6517 | 8% |
| 생성물 | Bis(triethoxysilyl)ethane | HCID 85266 | 13% |
반응 단계
The reaction was carried out as in Comparative Example 5, except that triethoxysilane was used as the starting silane. The reaction as monitored by GPC and was complete in two hours. Vinyltriethoxysilane (79%) was the major product formed and significant amounts of 1,2-bis(triethoxysilyl)ethane (13%) and tetraethoxysilane (8%) by-products, were also formed.
출처 및 근거
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|---|
| 특허 번호 | US04579965 |
| 출처 데이터셋 | uspto-grants-1986_04 |
| ORD ID | ord-b889258576cb498ebab08629d176de5f |
| 출처 메모 | uspto-grants-1986_04 |