Methyl Benzoate → HCID 21677242, 화합물

HRID 1395875노트

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HRID 1395875 반응식
[CH:1]12[O:9][CH:8]1[CH2:7][CH2:6][CH:5]=[CH:4][CH2:3][CH2:2]2.C(OC)(=O)C1C=CC=CC=1>>[CH:8]12[O:9][CH:1]1[CH2:2][CH2:3][CH:4]=[CH:5][CH2:6][CH2:7]2

참가 물질

3

실험 절차

To a 9:1 ether/hexanes solution (250 mL) in a 500 mL quartz reaction vessel, was added (Z)-9-oxabicyclo[6.1.0]non-4-ene (1.0 g) and methyl benzoate (1.1 g) sensitizer. No attempt to degas the solution was made. The vessel was irradiated with 254 nm light in a Rayonet RPR-100 UV reactor (Southern New England Ultraviolet Company) under constant stirring. At 30 minute intervals, the irradiation was stopped and the entire solution was passed through a column packed with silver nitrate (10%) impregnated silica. The solution that passes through was then transferred back into the quartz flask and irradiation was continued. After 6 hours the irradiation was stopped and the silica was added to a solution of ammonium hydroxide and stirred for 5 minutes after which ether was added and stirring continued for 5 more minutes. After stirring the ether phase was decanted, washed with water, dried with magnesium sulfate, and evaporated yielding (E)-9-oxabicyclo[6.1.0]non-4-ene (0.4 g, 40% yield). 1HNMR (400 MHz CDCl3): δ 5.8-5.7 (m, 1H), 5.4-5.2 (m, 1H), 2.9-2.7 (m, 2H) 2.5-2.0 (m, 8H).

후처리

  1. customNo attempt to degas the solution
  2. customThe vessel was irradiated with 254 nm light in a Rayonet RPR-100 UV reactor (Southern New England Ultraviolet Company) under constant stirring
  3. customthe irradiation
  4. customthrough was then transferred back into the quartz flask and irradiation
  5. customAfter 6 hours the irradiation
  6. additionthe silica was added to a solution of ammonium hydroxide
  7. additionwas added
  8. stirringstirring
  9. stirringAfter stirring the ether phase
  10. customwas decanted
  11. washwashed with water
  12. dry with materialdried with magnesium sulfate
  13. customevaporated

출처 및 근거

ORD 기록
ord-a24e59e2127d45bbb0eefaed5893d2d5
출처 데이터셋
uspto-grants-2014_12
특허 번호
US08900549B2

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