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llms.txt · MCP 가이드개인정보처리방침 · 이용약관 · 지원v1.8.0
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Acetonitrile → HCID 22466766, 화합물

HRID 1595749
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HRID 1595749 반응식
[Li]CCCC.[CH3:6][C:7]#[N:8].CO[C:11](=[O:25])[C:12]1[CH:17]=[CH:16][CH:15]=[C:14]([O:18][CH3:19])[C:13]=1[N:20]=[CH:21]N(C)C>C1COCC1>[CH3:19][O:18][C:14]1[CH:15]=[CH:16][CH:17]=[C:12]2[C:13]=1[NH:20][CH:21]=[C:6]([C:7]#[N:8])[C:11]2=[O:25]
참가 물질반응 조건실험 절차후처리출처 및 근거반응 노트

참가 물질

5

반응물 3

HCID 6342AcetonitrileHCID 545683112-(Dimethylamino-methyleneamino)-3-methoxy-benzoic acid methyl esterHCID 178418339Butyllithium

생성물 1

HCID 22466766HCID 22466766, 화합물수율 77.5%

시약·촉매·용매 1

HCID 8028Tetrahydrofuran용매3회

반응 조건

온도
-78 °C

실험 절차

To 35.0 mL of THF was added 26.6 mL (66.4 mmol ) of n-BuLi solution during 5 min at −78° C. To the stirred solution was added a solution of 3.55 mL (67.9 mmol) of CH3CN in 65 mL of THF during 10 min which time the solution became white suspension, and then continued to stir for 15 min at −78° C. To the suspension was added a solution of 5.8 g (24.5 mmol) of 2-(Dimethylamino-methyleneamino)-3-methoxy-benzoic acid methyl ester in 45 mL of THF during 30 min, and then continued to stir 30 min at −78° C. during which time the mixture gradually became clear. The solution was quenched with 8.5 mL of HOAc. The resulting thick slurry was stirred and warmed to room temperature. After most of the solvent was evaporated, the residue was diluted with cold water. The separate solid was collected by filtration and washed with water. After drying in vacuo, this afforded 3.8 g of the product as an off white solid in 77.6% of yield, m.p. 270° C. (dec.), mass spectrum (electrospray, m/e): M+H 201.1

후처리

  1. stirringto stir 30 min at −78° C. during which time the mixture gradually became clear
  2. customThe solution was quenched with 8.5 mL of HOAc
  3. stirringThe resulting thick slurry was stirred
  4. temperaturewarmed to room temperature
  5. customAfter most of the solvent was evaporated
  6. additionthe residue was diluted with cold water
  7. filtrationThe separate solid was collected by filtration
  8. washwashed with water
  9. customAfter drying in vacuo

출처 및 근거

ORD 기록
ord-eb1df3c7bf744c54b276ad71402980d1
출처 데이터셋
uspto-grants-2001_09
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US06288082B1

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