참여 물질
| 역할 | 이름 | HCID | 투입량 |
|---|
| 반응물 | Chlorotrimethylsilane | HCID 6397 | — |
| 반응물 | Diethoxymethane | HCID 10024 | — |
| 반응물 | Allyl isocyanate | HCID 15123 | — |
| 반응물 | Trimethylsilylacetylene | HCID 66111 | — |
| 반응물 | Lithium diisopropylamide | HCID 2724682 | — |
| 반응물 | Butyllithium | HCID 178418339 | — |
| 용매 | Tetrahydrofuran | HCID 8028 | — |
| 용매 | tert-Butyl methyl ether | HCID 15413 | — |
| 생성물 | N-allyl-3-trimethylsilylpropiolic amide | HCID 11217610 | — |
반응 단계
The reaction is carried out by dissolving trimethylsilylacetylene in an solvent. Preferred solvents include ethereals such as THF, diethoxymethane and t-butylmethyl ether. At about 0° C., a strong base is added dropwise over a period of about 15 minutes. Examples of strong bases are n-butyl lithium and lithium diisopropyl amide. While still maintaining the temperature near 0° C., a solution of allyl isocyanate in solvent is added dropwise over about 15 minutes. This is followed by the dropwise addition of trimethylsilyl chloride. After holding the reaction mixture at about 0 to about 10° C. for about 3 hours, the reaction is quenched with aqueous ammonium chloride and extracted with dichloromethane. The solvent is evaporated to yield the product, N-allyl-3-trimethylsilylpropiolic amide.
출처 및 근거
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|
| 특허 번호 | US06291513B1 |
|---|
| 출처 데이터셋 | uspto-grants-2001_09 |
|---|
| ORD ID | ord-a31367e9ef604a1bad0292483a4caf64 |
|---|
| 출처 메모 | uspto-grants-2001_09 |
|---|
