TIN OXIDE (SnO) → HCID 131731695, 화합물

반응식

[O-2:1].[Zn+2:2].[Sn:3]=O.[O-2].[Yb+3:6].[O-2].[O-2].[Yb+3]>>[O-2:1].[Zn+2:2].[Sn:3]=[O:1].[O-2:1].[Yb+3:6].[O-2:1].[O-2:1].[Yb+3:6]

참가 물질

반응물 3

HCID 88989TIN OXIDE (SnO)

HCID 159375Ytterbium oxide

HCID 3007857Zinc Oxide

생성물 1

HCID 131731695HCID 131731695, 화합물

실험 절차

Except that a target containing zinc oxide, tin oxide and ytterbium oxide (molar ratio of Zn:Sn:Yb=20:76:4) was used, zinc oxide-tin oxide-ytterbium oxide (ZTYbO) thin films were formed in the same manner as in Example 1-1 and Comparative 1-1.

출처 및 근거

ORD 기록: ord-8f7b19eb41cd4c0cb1bb92e3fbb357ae
출처 데이터셋: uspto-grants-2014_07
DOI: 10.6084/m9.figshare.5104873.v1
특허 번호: US08785920B2

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