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Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
HRID 1771005생성일: 2026년 10월 27일

TIN OXIDE (SnO) → Indium oxide tin oxide samarium oxide

https://huagongshe.com/reaction/1771005

반응식

참여 물질

역할이름HCID투입량
반응물TIN OXIDE (SnO)HCID 88989—
반응물Indium oxideHCID 150905—
반응물Samarium oxide (Sm2O3)HCID 159425—
생성물Indium oxide tin oxide samarium oxideHCID 131731696—

반응 단계

Except that a target containing indium oxide, tin oxide and samarium oxide (molar ratio of In:Sn:Sm=60:35:5) was used, indium oxide-tin oxide-samarium oxide (ITSmO) thin films were formed in the same manner as in Example 1-1 and Comparative 1-1.

출처 및 근거

DOI10.6084/m9.figshare.5104873.v1
특허 번호US09249032B2
출처 데이터셋uspto-grants-2016_02
ORD IDord-af2deb8a4e7543958bd9c0e0bbbb1d19
출처 메모uspto-grants-2016_02