참여 물질
| 역할 | 이름 | HCID | 투입량 |
|---|
| 반응물 | Diethyl Ether | HCID 3283 | — |
| 반응물 | Chlorotrimethylsilane | HCID 6397 | — |
| 반응물 | N,N,N',N'-Tetramethylethylenediamine | HCID 8037 | — |
| 반응물 | 2-Cyclohexen-1-one | HCID 13594 | — |
| 반응물 | HCID 178418348 | HCID 178418348 | — |
| 촉매 | Copper iodide | HCID 83717 | — |
| 용매 | Tetrahydrofuran | HCID 8028 | — |
| 생성물 | Trimethyl-(3-methyl-cyclohex-1-enyloxy)-silane | HCID 597981 | 52% |
반응 단계
Under nitrogen atmosphere, a suspension of N,N,N′,N′-tetramethylethylenediamine (0.94 mL, 6.24 mmol) and copper iodide (0.42 g, 2.18 mmol) in anhydrous tetrahydrofuran (4 mL) was stirred at room temperature for 5 minutes. The reaction mixture was cooled to −78° C. and a 1.6 M methyl lithium solution in diethyl ether (1.30 mL, 2.08 mmol) was added. After stirring for 20 minutes at the same temperature, trimethylsilyl chloride (0.66 mL, 5.20 mmol) and a solution of cyclohexenone (0.20 g, 2.08 mmol) in anhydrous tetrahydrofuran (2 mL) were added. The reaction mixture was stirred 20 minutes at −78° C. and quenched with a saturated solution of ammonium chloride (10 mL). Diethyl ether (20 mL) was added and the mixture was allowed to reach room temperature. Layers were separated and the organic layer was successively washed with 0.5N hydrochloric acid (15 mL), and a saturated solution of sodium bicarbonate (15 mL), then dried over sodium sulfate and concentrated in vacuo. The residue was purified by flash chromatography on silica gel (dichloromethane) to provide trimethyl[(3-methylcyclohex-1-en-1-yl)oxy]silane (17a) (0.20 g, 1.08 mmol, 52%).
출처 및 근거
| DOI | 10.6084/m9.figshare.5104873.v1 |
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| 특허 번호 | US09260395B2 |
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| 출처 데이터셋 | uspto-grants-2016_02 |
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| ORD ID | ord-cba562ac7b824b6a9ba2da9c32d61ac0 |
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| 출처 메모 | uspto-grants-2016_02 |
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