Vinyltriethoxysilane → Phosphonic acid, P-(2-(triethoxysilyl)ethyl)-, diethyl ester

HRID 1829950

반응식

HRID 1829950 반응식
[P:1]([O-:8])([O:5][CH2:6][CH3:7])[O:2][CH2:3][CH3:4].[CH:9]([Si:11]([O:18][CH2:19][CH3:20])([O:15][CH2:16][CH3:17])[O:12][CH2:13][CH3:14])=[CH2:10]>>[Si:11]([CH2:9][CH2:10][P:1]([O:5][CH2:6][CH3:7])([O:2][CH2:3][CH3:4])=[O:8])([O:18][CH2:19][CH3:20])([O:15][CH2:16][CH3:17])[O:12][CH2:13][CH3:14]

참가 물질

3

실험 절차

Compounds of Formula II can be synthesised via a free radical promoted addition of a dialkyl phosphite to vinyl trialkoxy silane and then distillation, according to the procedure of G. H. Barnes and M. P. David in J. Org. Chem., 25, 1191, (1960). In this paper Barnes and David reported the synthesis of a number of organosilicon phosphonate esters and acids. They utilised known procedures for the free radical addition of dialkyl phosphites to double bonds. The state of this art is described in Org. Reactions. Vol. 13, 218–222. They reacted diethyl phosphite with vinyl triethoxy silane at 120–130° C. in the presence of a free radical initiator. The desired product, (EtO)3SiCH2CH2PO(OEt)2, was obtained after careful distillation in 33% yield.

후처리

  1. distillationdistillation
  2. customthe synthesis of a number of organosilicon phosphonate esters and acids

출처 및 근거

ORD 기록
ord-2169ac47b2d64c30858d3ea05b59ffcf
출처 데이터셋
uspto-grants-2006_06
특허 번호
US07064226B2

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