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HCID 90409093, 화합물 → HCID 90408476, 화합물

HRID 1855065
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HRID 1855065 반응식
[CH2:1]([Li])CCC.[O:6]([C:13]1[CH:14]=[C:15]([C:19]23[CH2:26][CH2:25][C:22]([CH:27]=O)([CH2:23][CH2:24]2)[O:21][CH2:20]3)[CH:16]=[CH:17][CH:18]=1)[C:7]1[CH:12]=[CH:11][CH:10]=[CH:9][CH:8]=1>[Br-].C[P+](C1C=CC=CC=1)(C1C=CC=CC=1)C1C=CC=CC=1.C1COCC1>[O:6]([C:13]1[CH:14]=[C:15]([C:19]23[CH2:26][CH2:25][C:22]([CH:27]=[CH2:1])([CH2:23][CH2:24]2)[O:21][CH2:20]3)[CH:16]=[CH:17][CH:18]=1)[C:7]1[CH:12]=[CH:11][CH:10]=[CH:9][CH:8]=1
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참가 물질

5

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HCID 90409093HCID 90409093, 화합물HCID 178418339Butyllithium

생성물 1

HCID 90408476HCID 90408476, 화합물수율 61%

시약·촉매·용매 2

HCID 74505Methyltriphenyliphosphonium bromide촉매HCID 8028Tetrahydrofuran용매2회

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온도
0 °C

실험 절차

To a solution of (methyl)triphenylphosphonium bromide (80 mg, 0.224 mmol) in THF (1 mL) at 0° C. was added n-butyllithium (0.140 ml, 0.224 mmol). The reaction mixture was stirred at 0° C. for 30 min. A solution of 4-(3-Phenoxyphenyl)-2-oxabicyclo[2.2.2]octane-1-carbaldehyde (23 mg, 0.075 mmol) in THF (0.5 mL) was then added at 0° C. The reaction was warmed to rt and stirred for 4 h. The reaction was then quenched with saturated aq. NH4Cl, diluted with EtOAc, washed with water and brine, dried (MgSO4), filtered, and concentrated in vacuo. The residue was purified by flash chromatography on SiO2 (0 to 50% EtOAc:hexanes) to afford the title compound (14 mg, 61% yield) as a colorless oil. 1H NMR (500 MHz, CDCl3) δ 7.37-7.29 (m, 3H), 7.14-7.10 (m, 1H), 7.01 (d, J=7.7 Hz, 4H), 6.84 (ddd, J=8.0, 2.4, 0.8 Hz, 1H), 5.89 (dd, J=17.5, 10.9 Hz, 1H), 5.20 (d, J=17.3 Hz, 1H), 5.07 (d, J=10.7 Hz, 1H), 4.08-4.03 (m, 2H), 2.13-1.91 (m, 6H), 1.87-1.80 (m, 2H).

후처리

  1. temperatureThe reaction was warmed to rt
  2. stirringstirred for 4 h
  3. customThe reaction was then quenched with saturated aq. NH4Cl
  4. additiondiluted with EtOAc
  5. washwashed with water and brine
  6. dry with materialdried (MgSO4)
  7. filtrationfiltered
  8. concentrationconcentrated in vacuo
  9. customThe residue was purified by flash chromatography on SiO2 (0 to 50% EtOAc:hexanes)

출처 및 근거

ORD 기록
ord-093a5d10ec4b41e986cfa721e676239b
출처 데이터셋
uspto-grants-2015_02
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US08962660B2

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